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参数资料
| 型号： | CM75DU-24F |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 3/4页 |
| 文件大小： | 107K |
| 代理商： | CM75DU-24F |
3
CM75DU-24F
Trench Gate Design Dual IGBTMOD
75 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
29
nf
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
1.3
nf
Reverse Transfer Capacitance
–
–
0.75
nf
Inductive
Turn-on Delay Time
V
CC
= 600V, I
C
= 75A,
V
GE1
= V
GE2
= 15V,
R
G
= 4.2 ,
Inductive Load
–
–
100
ns
Load
Rise Time
–
–
50
ns
Switch
Turn-off Delay Time
–
–
400
ns
Times
Fall Time
–
–
300
ns
Diode Reverse Recovery Time**
Switching Operation
–
–
150
ns
Diode Reverse Recovery Charge**
I
E
= 75A
–
3.1
–
μ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module, T
c
Reference
Point per Outline Drawing
–
0.28
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/2 Module, T
c
Reference
Point per Outline Drawing
–
–
0.47
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
'Q
Per IGBT 1/2 Module,
–
0.19
°
C/W
T
c
Reference Point Under Chip
Per Module, Thermal Grease Applied
Contact Thermal Resistance
R
th(c-f)
–
0.035
–
°
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75DU-24H | 功能描述:IGBT MOD DUAL 1200V 75A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75DU-24H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75DY12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) |
| CM75DY-12E | 制造商:PRX 功能描述: |
| CM75DY-12G | 制造商:PRX 功能描述: |
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