参数资料
型号: CM75RX-24S
厂商: Powerex Inc
文件页数: 2/13页
文件大小: 0K
描述: IGBT MOD 7PAC 1200V 75A NX SER
标准包装: 2
系列: IGBTMOD™
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.15V @ 15V,75A
电流 - 集电极 (Ic)(最大): 75A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 7.5nF @ 10V
功率 - 最大: 600W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
其它名称: 835-1119
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBT + Brake NX-Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V GE = 0V)
Gate-Emitter Voltage (V CE = 0V)
Collector Current (DC, T C = 122°C) *2,*4
Collector Current (Pulse, Repetitive) *3
Total Power Dissipation (T C = 25°C) *2,*4
Symbol
V CES
V GES
I C
I CRM
P tot
Rating
1200
±20
75
150
600
Units
Volts
Volts
Amperes
Amperes
Watts
I E
Emitter
Current *2
*1
75
Amperes
Emitter Current (Pulse, Repetitive) *3
I ERM *1
150
Amperes
Brake Part IGBT/ClampDi
Characteristics
Collector-Emitter Voltage (V GE = 0V)
Gate-Emitter Voltage (V CE = 0V)
Symbol
V CES
V GES
Rating
1200
±20
Units
Volts
Volts
Collector Current (DC, T C =
125°C) *2,*4
I C
50
Amperes
Collector Current (Pulse, Repetitive) *3
I CRM
100
Amperes
Total Power Dissipation (T C =
25°C) *2,*4
P tot
425
Watts
Repetitive Peak Reverse Voltage (V GE = 0V)
V RRM
1200
Volts
I F
Forward
Current *2
*1
50
Amperes
Forward Current (Pulse, Repetitive) *3
I FRM *1
100
Amperes
Module
Characteristics
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature, Instantaneous Event (Overload)
Maximum Case Temperature *4
Operating Junction Temperature, Continuous Operation (Under Switching)
Storage Temperature
Symbol
V ISO
T j(max)
T C(max)
T j(op)
T stg
Rating
2500
175
125
-40 to +150
-40 to +125
Units
Volts
°C
°C
°C
°C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
Tr
Tr
UP
WP
Tr
Tr Th
Tr
UN
Di
WP WN
Di
Di
Di
Tr
*2  Junction temperature (T j ) should not increase beyond maximum junction
temperature (T j(max) ) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (T j )
does not exceed T j(max) rating.
*4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
LABEL SIDE
0
20.0
21.0
27.8 26.8
28.5
29.5
35.3
36.3
35
36
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
Di
Tr Br
VP
Di Di
UP VN
VP
UN VN WN
Br
1
2
3
4
12
11
10
9
8
7
6
5
0
18.6
20.0
26.8
28.5
35.3
40.5
Each mark points to the center position of each chip.
2
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp
Di*P / Di*N (* = U/V/W): FWDi
Th: NTC Thermistor
02/14 Rev. 6
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