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参数资料
| 型号： | CM75RX-24S |
| 厂商： | Powerex Inc |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD 7PAC 1200V 75A NX SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.15V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 7.5nF @ 10V |
| 功率 - 最大： | 600W |
| 输入： | 标准 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 其它名称： | 835-1119 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBT + Brake NX-Series Module
75 Amperes/1200 Volts
Electrical Characteristics, T j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Symbol
I CES
I GES
V GE(th)
V CE(sat)
(Terminal)
V CE(sat)
(Chip)
C ies
C oes
C res
Q G
t d(on)
t r
t d(off)
t f
V EC *1
(Terminal)
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 7.5mA, V CE = 10V
I C = 75A, V GE = 15V, T j = 25°C *5
I C = 75A, V GE = 15V, T j = 125°C *5
I C = 75A, V GE = 15V, T j = 150°C *5
I C = 75A, V GE = 15V, T j = 25°C *5
I C = 75A, V GE = 15V, T j = 125°C *5
150°C *5
I C = 75A, V GE = 15V, T j =
V CE = 10V, V GE = 0V
V CC = 600V, I C = 75A, V GE = 15V
V CC = 600V, I C = 75A, V GE = ± 15V,
R G = 8.2?, Inductive Load
I E = 75A, V GE = 0V, T j = 25°C *5
I E = 75A, V GE = 0V, T j = 125°C *5
I E = 75A, V GE = 0V, T j = 150°C *5
Min.
—
—
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
6.0
1.80
2.00
2.05
1.70
1.90
1.95
—
—
—
175
—
—
—
—
1.80
1.80
1.80
Max.
1.0
0.5
6.6
2.25
—
—
2.15
—
—
7.5
1.5
0.13
—
300
200
600
300
2.25
—
—
Units
mA
μA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
V EC
Emitter-CollectorVoltage
*1
I E = 75A, V GE = 0V, T j =
25°C *5
—
1.70
2.15
Volts
(Chip)
I E = 75A, V GE = 0V, T j = 125°C *5
—
1.70
—
Volts
I E = 75A, V GE = 0V, T j =
150°C *5
—
1.70
—
Volts
Q rr
Reverse RecoveryTime
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
t rr *1
*1
E on
E off
E rr *1
R CC' + EE'
V CC = 600V, I E = 75A, V GE = ± 15V
R G = 8.2?, Inductive Load
V CC = 600V, I C = I E = 75A,
V GE = ±15V, R G = 8.2?,
T j = 150°C, Inductive Load
Main Terminals-Chip,
—
—
—
—
—
—
—
4.0
7.3
8.0
6.9
—
300
—
—
—
—
2.4
ns
μC
mJ
mJ
mJ
m?
Per Switch,T C = 25°C *4
Internal Gate Resistance
r g
Per Switch
—
0
—
?
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
LABEL SIDE
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
0
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
0
Tr
WP
Tr
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
20.0
21.0
27.8 26.8
28.5
29.5
35.3
36.3
35
36
Tr
UP
Di
UP
Tr
UN
Di
UN
Tr
VP
Di
VP
Tr
VN
Di
VN
Di
Br
Di Tr Th
WP WN
Di
WN
Br
12
11
10
9
8
7
6
5
18.6
20.0
26.8
28.5
35.3
40.5
1
2
3
4
Each mark points to the center position of each chip.
02/14 Rev. 6
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp
Di*P / Di*N (* = U/V/W): FWDi
Th: NTC Thermistor
3
相关PDF资料 |
PDF描述 |
|---|---|
| CM75TF-12H | IGBT MOD 6PAC 600V 75A H SER |
| CM75TF-24H | IGBT MOD 6PAC 1200V 75A H SER |
| CM75TF-28H | IGBT MOD 6PAC 1400V 75A H SER |
| CM75TL-12NF | IGBT MOD 6PAC 600V 75A NF SER |
| CM75TL-24NF | IGBT MOD 6PAC 1200V 75A NF SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75RX-34SA | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Six IGBT Brake NX-Series Module 75 Amperes/1700 Volts |
| CM75TF12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) |
| CM75TF-12H | 功能描述:IGBT MOD 6PAC 600V 75A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75TF-24H | 功能描述:IGBT MOD 6PAC 1200V 75A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75TF-28H | 功能描述:IGBT MOD 6PAC 1400V 75A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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