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参数资料
| 型号： | CM75RX-24S |
| 厂商： | Powerex Inc |
| 文件页数： | 5/13页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD 7PAC 1200V 75A NX SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.15V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 7.5nF @ 10V |
| 功率 - 最大： | 600W |
| 输入： | 标准 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 其它名称： | 835-1119 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBT + Brake NX-Series Module
75 Amperes/1200 Volts
Electrical Characteristics, T j = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Zero Power Resistance
R 25
T C =
25°C *4
4.85
5.00
5.15
k?
Deviation of Resistance
? R/R
T C = 100°C *4 , R 100 = 493?
-7.3
—
+7.8
%
B Constant
B (25/50)
Approximate by
Equation *6
—
3375
—
K
Power Dissipation
P 25
T C = 25°C *4
—
—
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case *4
R th(j-c) Q
Per Inverter IGBT
—
—
0.25
K/W
Thermal Resistance, Junction to
Thermal Resistance, Junction to
Case *4
Case *4
R th(j-c) D
R th(j-c) Q
Per Inverter FWDi
Per Brake IGBT
—
—
—
—
0.40
0.35
K/W
K/W
Thermal Resistance, Junction to Case *4
Contact Thermal Resistance,
R th(j-c) D
R th(c-f)
Per Brake ClampDi
Thermal Grease Applied,
—
—
—
15
0.63
—
K/W
K/kW
Case to Heatsink *4
Mechanical Characteristics
Per 1 Module *7
Mounting Torque
Mounting Torque
Creepage Distance
Clearance
M t
M s
d s
d a
Main Terminal, M5 Screw
Mounting to Heatsink, M5 Screw
Terminal to Terminal
Terminal to Baseplate
Terminal to Terminal
Terminal to Baseplate
22
22
10.25
12.32
10.28
10.85
27
27
—
—
—
—
31
31
—
—
—
—
in-lb
in-lb
mm
mm
mm
mm
Weight
m
370
g
Flatness of Baseplate
e c
On Centerline X, Y *8
± 0
—
±100
μm
Recommended Operating Conditons, T a = 25°C
DC Supply Voltage
Gate-Emitter Drive Voltage
V CC
V GE(on)
Applied Across P-N Terminals
Applied Across
—
13.5
600
15.0
850
16.5
Volts
Volts
G*P-E*P/G*N-E*N (* = U, V, W) Terminals
External Gate Resistance
R G
Per Switch Inverter IGBT
Per Switch Brake IGBT
8.2
13
—
—
82
130
?
?
*4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
LABEL SIDE
R 50
T 25
*6 B (25/50) = In(
R 25
)/(
1
–
1
T 50
)
0
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
0
Tr Th
Tr
R 25 ;Resistance atAbsoluteTemperatureT 25 [K];T 25 = 25 [°C] + 273.15 = 298.15 [K]
R 50 ; Resistance at Absolute Temperature T 50 [K]; T 50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m ? K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
20.0
21.0
27.8 26.8
28.5
29.5
35.3
36.3
35
36
Tr
UP
Di
UP
Tr
UN
Di
UN
Tr
VP
Di
VP
Tr
VN
Di
VN
Tr
WP
Di
WP
WN
Di
WN
Di
Br
Br
12
11
10
9
8
7
6
5
18.6
20.0
26.8
28.5
35.3
40.5
1
2
3
4
Y
X
MOUNTING
SIDE
Each mark points to the center position of each chip.
MOUNTING SIDE
– : CONCAVE
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp
Di*P / Di*N (* = U/V/W): FWDi
Th: NTC Thermistor
02/14 Rev. 6
MOUNTING SIDE
+ : CONVEX
5
相关PDF资料 |
PDF描述 |
|---|---|
| CM75TF-12H | IGBT MOD 6PAC 600V 75A H SER |
| CM75TF-24H | IGBT MOD 6PAC 1200V 75A H SER |
| CM75TF-28H | IGBT MOD 6PAC 1400V 75A H SER |
| CM75TL-12NF | IGBT MOD 6PAC 600V 75A NF SER |
| CM75TL-24NF | IGBT MOD 6PAC 1200V 75A NF SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75RX-34SA | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Six IGBT Brake NX-Series Module 75 Amperes/1700 Volts |
| CM75TF12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) |
| CM75TF-12H | 功能描述:IGBT MOD 6PAC 600V 75A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75TF-24H | 功能描述:IGBT MOD 6PAC 1200V 75A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75TF-28H | 功能描述:IGBT MOD 6PAC 1400V 75A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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