- 您现在的位置：买卖IC网 > PDF目录381676 > CM800DU-12H (POWEREX INC) Dual IGBTMOD 800 Amperes/600 Volts PDF资料下载
参数资料
| 型号： | CM800DU-12H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Dual IGBTMOD 800 Amperes/600 Volts |
| 中文描述： | 800 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 2/4页 |
| 文件大小： | 76K |
| 代理商： | CM800DU-12H |
2
CM800DU-12H
Dual IGBTMOD
U-Series Module
800 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM800DU-12H
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
600
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
c
= 25
°
C)
Peak Collector Current
800
Amperes
1600*
Amperes
Emitter Current** (T
c
= 25
°
C)
Peak Emitter Current**
800
Amperes
1600*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C, T
j
≤
150
°
C)
Mounting Torque, M8 Main Terminal
1500
Watts
95
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
G(E) Terminal, M4
–
15
in-lb
Weight
–
1200 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 80mA, V
CE
= 10V
I
C
= 800A, V
GE
= 15V, T
j
= 25
°
C
I
C
= 800A, V
GE
= 15V, T
j
= 125
°
C
V
CC
= 300V, I
C
= 800A, V
GE
= 15V
I
E
= 800A, V
GE
= 0V
–
–
2
mA
Gate Leakage Voltage
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
–
2.55 3.15 Volts
–
2.75
–
Volts
Total Gate Charge
Q
G
V
EC
–
1600
–
nC
Emitter-Collector Voltage**
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
–
–
2.6
Volts
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
Test Conditions
Min.
–
Typ.
–
Max.
70.4
Units
nf
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
38.4
nf
Reverse Transfer Capacitance
–
–
10.4
nf
Resistive
Turn-on Delay Time
V
CC
= 300V, I
C
= 800A,
V
GE1
= V
GE2
= 15V,
R
G
= 3.1 , Resistive
Load Switching Operation
– – 400 ns
Load
Rise Time
–
–
2000 ns
Switch
Turn-off Delay Time
–
–
500 ns
Times
Fall Time
–
–
300 ns
Diode Reverse Recovery Time**
I
E
= 800A, di
E
/dt = -1600A/
μ
s
I
E
= 800A, di
E
/dt = -1600A/
μ
s
–
–
160
ns
Diode Reverse Recovery Charge**
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
–
1.92
–
μ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Thermal Resistance, Junction to Case
R
th(j-c)
R
Contact Thermal Resistance
R
th(c-f)
Test Conditions
Per IGBT 1/2 Module
Min.
–
Typ.
–
Max.
0.083
°
C/W
Units
Per FWDi 1/2 Module
–
–
0.13
°
C/W
°
C/W
Per Module, Thermal Grease Applied
–
0.010
–
相关PDF资料 |
PDF描述 |
|---|---|
| CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HA-28H | Single IGBTMOD 800 Amperes/1400 Volts |
| CM800HA-34H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HB-50H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HB-66H | HIGH POWER SWITCHING USE INSULATED TYPE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM800DY-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT 1200V 790A 5355W MODULE 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 800A; Transistor Polarity:Dual N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.355kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM800DZ-34H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM800DZB-34N | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800E2C-66H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM800E2Z-66H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
发布紧急采购，3分钟左右您将得到回复。