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参数资料
| 型号： | CM800DU-12H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Dual IGBTMOD 800 Amperes/600 Volts |
| 中文描述： | 800 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 3/4页 |
| 文件大小： | 76K |
| 代理商： | CM800DU-12H |
3
CM800DU-12H
Dual IGBTMOD
U-Series Module
800 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
1200
400
0
V
GE
= 20V
14
15
20
12
13
11
8
T
j
= 25
o
C
800
1600
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
,
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
1600
1200
800
400
0
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
0
400
800
1200
1600
4
3
2
1
0
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
S
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25
°
C
0
4
8
12
16
20
8
6
4
2
0
I
C
= 320A
I
C
= 1600A
I
C
= 800A
.5
1.0
1.5
2.0
3.0
2.5
10
1
10
2
10
3
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
4
E
E
,
T
j
= 25
°
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
= 0V
f = 1MHz
10
1
C
oes
C
res
C
ies
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
=
±
15V
R
G
= 0.78
T
j
= 125
°
C
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
R
r
,
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
di/dt = -1600A/
μ
sec
T
j
= 25
°
C
10
2
10
1
10
0
r
,
GATE CHARGE, Q
G
, (nC)
G
G
,
GATE CHARGE, V
GE
20
0
500
1500
1000
16
12
8
4
0
2500
2000
V
CC
= 300V
V
CC
= 200V
I
C
= 400A
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相关代理商/技术参数 |
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|---|---|
| CM800DY-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT 1200V 790A 5355W MODULE 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 800A; Transistor Polarity:Dual N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.355kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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