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参数资料
| 型号： | CM800HA-34H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 800 A, 1700 V, N-CHANNEL IGBT |
| 封装： | POWER MODULE-7 |
| 文件页数： | 2/4页 |
| 文件大小： | 46K |
| 代理商： | CM800HA-34H |
Feb. 2000
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 850V, I
C
= 800A, V
GE
= 15V
V
CC
= 850V, I
C
= 800A
V
GE1
= V
GE2
= 15V
R
G
= 2.5
Resistive load switching operation
I
E
= 800A, V
GE
= 0V
I
E
= 800A
die / dt = –1600A /
μ
s
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
°
C)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
Pulse
T
C
= 25
°
C, IGBT part
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
1700
±
20
800
1600
800
1600
8300
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Symbol
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM
(Note 2)
P
C
(Note 3)
T
j
T
stg
V
iso
Item
Conditions
Unit
V
V
A
A
A
A
W
°
C
°
C
V
N·m
N·m
N·m
kg
Ratings
—
—
V
V
Min
—
Typ
—
Max
16
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.015
0.048
—
mA
μ
A
nF
nF
nF
μ
C
μ
s
μ
s
μ
s
μ
s
V
μ
s
μ
C
K/W
K/W
K/W
—
2.75
3.30
93
13.3
5.1
4.4
—
—
—
—
2.40
—
135
—
—
0.012
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC
(Note 2)
t
rr
(Note 2)
Q
rr
(Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
5.5
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.5
Thermal resistance
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
I
C
= 80mA, V
CE
= 10V
I
C
= 800A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM800HA50H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 2.5KV V(BR)CES | 800A I(C) |
| CM800HA-50H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HA66H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) |
| CM800HA-66H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM800HA-66H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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