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参数资料
| 型号： | CM800HA-34H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 800 A, 1700 V, N-CHANNEL IGBT |
| 封装： | POWER MODULE-7 |
| 文件页数： | 4/4页 |
| 文件大小： | 46K |
| 代理商： | CM800HA-34H |
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
7 10
2
10
–1
7
5
2 3
5 7 10
3
2 3
5
5
3
2
10
0
5
7
5
3
2
7 10
2
10
–1
7
5
2 3
5 7 10
3
2 3
5
5
3
2
10
0
5
t
d(off)
t
d(on)
V
CC
= 850V, V
GE
=
±
15V
R
G
= 2.5
, T
j
= 125
°
C
Inductive load
t
r
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
μ
s
COLLECTOR CURRENT I
C
(A)
V
CC
= 850V, T
j
= 125
°
C
Inductive load
V
GE
=
±
15V, R
G
= 2.5
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
R
r
μ
s
EMITTER CURRENT I
E
(A)
R
r
7
5
3
2
10
2
7
5
5
3
2
10
3
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
°
C
R
th(j – c)
= 0.024
°
C/W
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
N
T
t
TIME (s)
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
°
C
R
th(j – c)
= 0.060
°
C/W
N
T
t
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
20
16
12
8
4
0
8000
10000
6000
0
2000
4000
V
GE
– GATE CHARGE
(TYPICAL)
G
G
GATE CHARGE Q
G
(nC)
V
CC
= 850V
I
C
= 800A
相关PDF资料 |
PDF描述 |
|---|---|
| CM800HB-50H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HB-66H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM900DU-24NF | Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts |
| CM900HB-90H | Single IGBTMOD⑩ HVIGBT 900 Amperes/4500 Volts |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM800HA50H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 2.5KV V(BR)CES | 800A I(C) |
| CM800HA-50H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HA66H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) |
| CM800HA-66H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM800HA-66H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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