参数资料
型号: CM800HA-34H
厂商: POWEREX INC
元件分类: IGBT 晶体管
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 800 A, 1700 V, N-CHANNEL IGBT
封装: POWER MODULE-7
文件页数: 3/4页
文件大小: 46K
代理商: CM800HA-34H
Feb. 2000
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
C
C
GATE-EMITTER VOLTAGE V
GE
(V)
C
S
C
COLLECTOR CURRENT I
C
(A)
1600
800
400
0
10
0
2
4
6
8
1200
1600
800
400
0
1200
20
0
4
8
12
16
0
5
4
3
1
2
0
400
800
1200
1600
0
20
16
12
8
4
10
8
6
4
2
0
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
E
E
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T
j
= 25
°
C
T
j
= 25
°
C
V
GE
= 13V
V
GE
= 11V
V
GE
= 12V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
I
C
= 1600A
I
C
= 800A
I
C
= 320A
V
CE
= 10V
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
10
1
2 3
10
–1
5 710
0
2 3 5 710
1
2 3 5 710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
CAPACITANCE VS. V
CE
(TYPICAL)
C
i
,
o
,
r
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
°
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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