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参数资料
| 型号： | CM900DU-24NF |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts |
| 中文描述： | 900 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 2/4页 |
| 文件大小： | 78K |
| 代理商： | CM900DU-24NF |
2
CM900DU-24NF
Mega Power Dual IGBTMOD
900 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM900DU-24NF
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
C
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
C
= 25
°
C)
Peak Collector Current (T
j
≤
150
°
C)
Emitter Current (T
C
= 25
°
C)**
Peak Emitter Current**
900
Amperes
1800*
Amperes
900
Amperes
1800*
Amperes
Maximum Collector Dissipation (T
j
< 150
°
C) (T
C'
= 25
°
C)
Mounting Torque, M6 Mounting Screws
5950
Watts
40
in-lb
Mounting Torque, M6 Main Terminal Screw
–
40
in-lb
Weight (Typical)
–
1400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
(Chip)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 90mA, V
CE
= 10V
I
C
= 900A, V
GE
= 15V, T
j
= 25
°
C
I
C
= 900A, V
GE
= 15V, T
j
= 125
°
C
I
C
= 900A, Terminal-chip
V
CC
= 600V, I
C
= 900A, V
GE
= 15V
I
E
= 900A, V
GE
= 0V
–
–
1
mA
Gate Leakage Current
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
6
7
8
Volts
Collector-Emitter Saturation Voltage
–
1.9
2.5
Volts
(Without Lead Resistance)
–
2.1
–
Volts
Module Lead Resistance
R
(lead)
Q
G
V
EC
–
0.143
–
m
Total Gate Charge
–
4800
–
nC
Emitter-Collector Voltage**
–
–
3.4
Volts
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
140
nF
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
16
nF
Reverse Transfer Capacitance
–
–
3
nF
Inductive
Turn-on Delay Time
V
CC
= 600V,
I
C
= 900A, I
E
= 900A,
V
GE1
= V
GE2
= 15V,
R
G
= 1.0 ,
Inductive Load
–
–
300
ns
Load
Rise Time
–
–
200
ns
Switch
Turn-off Delay Time
–
–
800
ns
Times
Fall Time
–
–
300
ns
Diode Reverse Recovery Time**
–
–
500
ns
Diode Reverse Recovery Charge**
Switching Operation
–
50
–
μ
C
* Pulse width and repetition rate should be such that the device junction temperature (T
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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