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参数资料
| 型号： | CM900DU-24NF |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts |
| 中文描述： | 900 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 4/4页 |
| 文件大小： | 78K |
| 代理商： | CM900DU-24NF |
4
CM900DU-24NF
Mega Power Dual IGBTMOD
900 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
GATE CHARGE, Q
G
, (nC)
G
G
,
GATE CHARGE, VGE
20
0
16
12
8
4
0
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
1
10
2
10
3
10
2
10
1
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
1000 2000
4000
7000
3000
50006000
V
CC
= 600V
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
=
±
15V
R
G
= 1.0
T
= 125
°
C
Inductive Load
t
f
EMITTER CURRENT, I
E
, (AMPERES)
R
r
,
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
2
10
1
10
3
10
2
10
1
r
,
t
rr
I
rr
V
CC
= 600V
V
GE
=
±
15V
R
G
= 1.0
T
= 25
°
C
Inductive Load
V
CC
= 400V
I
C
= 900A
10
3
10
3
EMITTER CURRENT, I
E
, (AMPERES)
S
r
,
SWITCHING LOSS VS. EMITTER CURRENT
(TYPICAL)
10
1
10
2
10
3
10
0
10
1
10
2
V
CC
= 600V
V
GE
= 15V
T
j
= 125
°
C
R
= 1.0
Inductive Load
COLLECTOR CURRENT, I
C
, (AMPERES)
S
S
,
S
,
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10
3
V
CC
= 600V
V
GE
= 15V
T
j
= 125
°
C
R
G
= 1.0
E
SW(on)
E
Inductive Load
10
1
10
2
10
3
10
0
10
2
10
1
TIME, (s)
t
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
-2
10
-1
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
0
10
1
10
-1
10
-2
10
-3
Z
t
t
Per Unit Base
R
th(j-c)
= 0.021
°
C/W (IGBT)
R
th(j-c)
= 0.034
°
C/W (FWDi)
Single Pulse
T
C
= 25
°
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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