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参数资料
| 型号： | CM900DU-24NF |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts |
| 中文描述： | 900 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 3/4页 |
| 文件大小： | 78K |
| 代理商： | CM900DU-24NF |
3
CM900DU-24NF
Mega Power Dual IGBTMOD
900 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c')
Q
Per IGBT 1/2 Module,
–
–
0.021
T
C
Reference Point Under Chip
Per FWDi 1/2 Module, T
C
Reference
T
C
Reference Point Under Chip
Per 1/2 Module, Thermal Grease Applied
Thermal Resistance, Junction to Case
R
th(j-c')
D
–
–
0.034
°
C/W
Contact Thermal Resistance
R
th(c-f)
–
0.016
–
°
C/W
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPA(TYPICAL)
10
0
10
2
10
3
10
2
10
1
10
0
10
-1
10
1
0.5
1.5
1.0
3.0
3.5
2.0
2.5
4.0
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
10
4
E
E
,
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
S
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25
°
C
0
4
8
12
16
20
8
6
4
2
0
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
3
4
0
300
900
2
1
0
1800
1200 1500
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 0V
C
ies
C
oes
C
res
I
C
= 360A
I
C
= 1800A
I
C
= 900A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
C
C
,
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
5
6
7
8
9 10
1000
1200
400
200
0
V
=
20V
10
11
12
15
13
9
8
T
j
= 25
o
C
800
600
1600
1400
1800
1000
1200
400
200
800
600
1600
1400
1800
600
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
8
12
16
0
20
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
4
10
-1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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