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参数资料
| 型号： | CMBT2907A-T |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMD, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 79K |
| 代理商： | CMBT2907A-T |
> 200
MHz
Turn-off switching time
toff
< 100
ns
-ICon = 150 mA; -IBon = IBoff = 15 mA
DC Current Gain
hFE
> 30
fT
Transition frequency at f = 100 MHz
-IC = 50 mA; -VCE = 20 V
-VCE = 10V -IC = 500mA
> 50
< 10
nA
uA
nA
< 50
60
250
600
IE = 0, -VCB = 50V, Tj=125
oC
< 20
Open emitter; -IC= 10uA, IE= 0
60
Emitter-base breakdown voltage
> 40
-VCE(Sat)
< 1.6
< 2.6
-VEB = 0.5V, -VCE = 30V
-ICEX
-VEB = 3V, -VCE = 30V
-IBEX
Saturation Voltages
Collector-base breakdown voltage
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VBE(Sat)
Collector-emitter breakdown voltage
mW
Storage Temperature
Tstg
UNITS
Collector Base Voltage
-VCEO
-VCBO
V
Collector Emitter Voltage
5.0
CMBT2907
CMBT2907A
60
Emitter Base Voltage
-VEBO
DESCRIPTION
SYMBOL
40
5.0
-55 to +150
150
CONDITIONS
K/W
oC
CMBT2907
CMBT2907A
500
Open collector; -IE= 10uA, IC= 0
Open base; -IC= 10mA, IB= 0
> 60
UNITS
Collector Cut Off Current
Base Current w/reverse biased emitter junction
mA
-ICBO
IE = 0, -VCB = 50V
< 20
< 10
SYMBOL
Rth(j-a)
Ptot
Tj
Collector Current
-IC
DESCRIPTION
-ICBO
Junction to Ambient in free air
Power dissipation up to Tamb = 25
oC
Thermal Characteristics
Junction Temperature
-VBE(Sat)
< 1.3
-IC = 150mA, -IB = 15mA
V
-IC = 500mA, -IB = 50mA
> 60
> 5.0
-VCE(Sat)
< 0.4
PNP Silicon Planar Epitaxial Transistors
CMBT2907
Electrical Characteristics (at Ta=25
oC unless otherwise specified)
Unit: mm
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
Absolute Maximum Ratings (Ta = 25
oC unless specified otherwise)
SOT-23 SMD Package
www.rectron.com
1 of 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CMBT2907AT/-W | 功能描述:两极晶体管 - BJT PNP 0.6A 60V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| CMBT3904 | 功能描述:两极晶体管 - BJT NPN,0.2A,40V GenPur RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMBT3904E | 功能描述:两极晶体管 - BJT SMD Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMBT3904E TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMBT3904E Series SOT-923 40V 200mA Surface Mount Bipolar Transistor |
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