参数资料
型号: CMBT2907A-T
厂商: RECTRON LTD
元件分类: 小信号晶体管
中文描述: 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SMD, 3 PIN
文件页数: 2/2页
文件大小: 79K
代理商: CMBT2907A-T
PNP Silicon Planar Epitaxial Transistors
CMBT2907
ns
< 100
-VEB = 2V, IC = Ic = 0
< 30
turn off time (ts + tf)
fall time
toff
Input Capacitance at f = 1 MHz
Ci
Turn-off time when switched from
to cut-off with + IBM = 15 mA
pF
VCC = 30V
pF
< 30
tf
VCC = 6V
> 75
-VCE = 10V, -IC = 0.1mA
Output Capacitance at f = 1 MHz
CO
-VCB = 10V, IE = Ie = 0
< 8.0
Transition Frequency at f = 100 MHz
fT
-VCE=20V, -IC=50mA
> 200
MHZ
> 30
> 100
> 50
> 35
-VCE = 10V, -IC = 10mA
> 75
> 100
DC Current Gain
hFE
-VCE = 10V, -IC = 150mA
100 to 300
-VCE = 10V, -IC = 1mA
-VCE = 10V, -IC = 500mA
> 50
storage time
ts
-IC = 150mA, -IB = 15mA,
< 80
ns
Switching times (between 10% and 90%)
-IC = 150mA, -IB = 15mA,
Turn-on time when switched to
delay time
td
< 10
rise time
tr
< 40
turn on time (td + tr)
ton
< 45
www.rectron.com
2 of 2
相关PDF资料
PDF描述
CMBT8050 NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMBT8050C NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMBT8050D NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMBT8050E NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMBT8550 PNP SILICON PLANAR EPITAXIAL TRANSISTOR
相关代理商/技术参数
参数描述
CMBT2907AT/-W 功能描述:两极晶体管 - BJT PNP 0.6A 60V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
CMBT3903 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON EPITAXIAL TRANSISTORS
CMBT3904 功能描述:两极晶体管 - BJT NPN,0.2A,40V GenPur RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
CMBT3904E 功能描述:两极晶体管 - BJT SMD Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
CMBT3904E TR 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMBT3904E Series SOT-923 40V 200mA Surface Mount Bipolar Transistor