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| 型号： | CMNT3904E |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 1 X 0.80 MM, 0.50 MM HEIGHT, ULTRA SMALL, FEMTOMINI-5 |
| 文件页数： | 1/2页 |
| 文件大小： | 363K |
| 代理商： | CMNT3904E |
CMNT3904E NPN
CMNT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMNT3904E
and CMNT3906E Low VCE(SAT) NPN and PNP
Transistors, respectively, are designed for applications
where ultra small size and power dissipation are the
prime requirements. Packaged in an FEMTOmini
SOT-953 package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODES: CMNT3904E: CL
CMNT3906E: CM
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
250
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
500
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
nA
BVCBO
IC=10A
60
115
90
V
BVCEO
IC=1.0mA
40
60
55
V
BVEBO
IE=10A
6.0
7.5
7.9
V
VCE(SAT)
IC=10mA, IB=1.0mA
.057
.05
0.1
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.1
0.2
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
0.95
V
hFE
VCE=1.0V, IC=0.1mA
90
240
130
hFE
VCE=1.0V, IC=1.0mA
100
235
150
Enhanced Specification
FEATURES
Very Small Package Size
Low Package Profile, 0.5mm
200mA Collector Current
Low VCE(SAT) (0.1V Typ @ 50mA)
Small, FEMTOmini 1 x 0.8mm,
SOT-953 Surface Mount Package
APPLICATIONS
DC / DC Converters
Voltage Clamping
Protection Circuits
Battery powered equipment including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SOT-953 CASE
R2 (25-January 2010)
www.centr a lsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| CMPT2222AE | |
| CMPT2907AE | |
| CMPT3904E | |
| CMPT3906E | |
| CMPT3906TR | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CMNT3904E TR | 制造商:Central Semiconductor Corp 功能描述:Trans GP BJT NPN 40V 0.2A 5-Pin SOT-953 T/R |
| CMNT3904E_10 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR |
| CMNT3906E | 功能描述:两极晶体管 - BJT Small Sig Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMNT3906E TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMNT3906 Series PNP 250 mW 40 V Surface Mount Silicon Transistor - SOT-953 |
| CMNTVS12V | 功能描述:TVS 二极管 - 瞬态电压抑制器 Transient Suppressor RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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