- 您现在的位置：买卖IC网 > PDF目录26502 > CMPT2222AE (CENTRAL SEMICONDUCTOR CORP) PDF资料下载
参数资料
| 型号： | CMPT2222AE |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 600 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 330K |
| 代理商： | CMPT2222AE |
CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222AE
is an Enhanced version of the CMPT2222A NPN
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C1PE
FEATURED ENHANCED SPECIFICATIONS:
BV
CBO from 75V min to 100V min. (145V TYP)
V
CE from 1.0V max to 0.5V max. (0.12V TYP)
h
FE from 40 to 60 min. (130 TYP)
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=125°C
10
μA
ICEV
VCE=60V, VEB=3.0V
10
nA
IEBO
VEB=3.0V
10
nA
BVCBO
IC=10A
100
145
V
BVCEO
IC=10mA
45
53
V
BVEBO
IE=10μA
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.92
0.15
V
VCE(SAT)
IC=500mA, IB=50mA
0.12
0.50
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=0.1mA
100
210
hFE
VCE=10V, IC=1.0mA
100
205
hFE
VCE=10V, IC=10mA
100
205
hFE
VCE=1.0V, IC=150mA
75
150
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
60
130
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
25
pF
Enhanced specification
SOT-23 CASE
R2 (1-February 2010)
www.centr a lsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| CMPT2907AE | |
| CMPT3904E | |
| CMPT3906E | |
| CMPT3906TR | |
| CMPTA42E | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CMPT2222AE TR | 制造商:Central Semiconductor Corp 功能描述:Transistors Bipolar - BJT NPN Enhanced |
| CMPT2222AE_10 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR |
| CMPT2222A-LEAD FREE | 制造商:Central Semiconductor Corp 功能描述:General Purpose NPN SMD (Surface Mount) Transistor SOT-23 350mW RoHS 制造商:Central Semiconductor Corp 功能描述:General Purpose NPN SMD (Surface Mount) Transistor SOT-23 350mW RoHS - free partial T/R at 500. |
| CMPT2369 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:NPN SILICON TRANSISTOR |
| CMPT2369 LEADFREE | 功能描述:两极晶体管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。