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参数资料
| 型号： | CMPT3904E |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 330K |
| 代理商： | CMPT3904E |
CMPT3904E NPN
CMPT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3904E and
CMPT3906E are Enhanced versions of the CMPT3904
and CMPT3906 complementary switching transistors in
a SOT-23 surface mount package, designed for small
signal switching applications, interface circuit & driver
circuit applications.
MARKING CODE: CMPT3904E: C1AE
CMPT3906E: C2AE
ENHANCED SPECIFICATIONS:
BVCBO from 40V min to 60V min. (CMPT3906E)
BVEBO from 5.0V min to 6.0V min. (CMPT3906E)
VCE(SAT) from 0.3V max to 0.2V max. (CMPT3904E)
from 0.4V max to 0.2V max. (CMPT3906E)
hFE from 60 min to 70 min. (CMPT3904E) (CMPT3906E)
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT3904E
CMPT3906E
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
nA
BVCBO
IC=10A
60
115
90
V
BVCEO
IC=1.0mA
40
60
55
V
BVEBO
IE=10A
6.0
7.5
7.9
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.057
0.050
0.100
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.100
0.200
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
0.95
V
hFE
VCE=1.0V, IC=0.1mA
90
240
130
hFE
VCE=1.0V, IC=1.0mA
100
235
150
hFE
VCE=1.0V, IC=10mA
100
215
150
300
hFE
VCE=1.0V, IC=50mA
70
110
120
hFE
VCE=1.0V, IC=100mA
30
50
55
Enhanced specification
SOT-23 CASE
R3 (1-February 2010)
www.centr a lsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CMPT3904E TR | 功能描述:TRANS NPN 40V 0.2A SOT-23 制造商:central semiconductor corp 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:200mA 电压 - 集射极击穿（最大值）:40V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:200mV @ 5mA，50mA 电流 - 集电极截止（最大值）:- 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:350mW 频率 - 跃迁:300MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:1 |
| CMPT3904E_10 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
| CMPT3904G | 功能描述:两极晶体管 - BJT NPN Gen Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMPT3904G TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMPT Series 40 V 200 mA NPN Surface Mount Silicon Transistor - SOT-23 |
| CMPT3904G-LEAD FREE | 制造商:Central Semiconductor Corp 功能描述:General Purpose NPN SMD (Surface Mount) Transistor SOT-23 350mW RoHS Halogen Free 制造商:Central Semiconductor Corp 功能描述:General Purpose NPN SMD (Surface Mount) Transistor SOT-23 350mW RoHS Halogen Free - free partial T/R at 500. |
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