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参数资料
| 型号： | CPC3701CTR |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DEPLETION 250V SOT89 |
| 标准包装： | 1,000 |
| 系列： | * |
CPC3701
60V, Depletion-Mode, N-Channel
I NTEGRATED C IRCUITS D IVISION
Vertical DMOS FET
V (BR)DSX /
V (BR)DGX
60V
R DS(on)
(max)
1 ?
I DSS (min)
600mA
Package
SOT-89
Description
The CPC3701 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
Features
? Depletion Mode Device Offers Low R DS(on)
at Cold Temperatures
? Low On-Resistance: 1 ? max. at 25oC
? High Input Impedance
? Low V GS(off) Voltage: -0.8 to -2.9V
? Small Package Size SOT-89
Applications
? Ignition Modules
? Normally-On Switches
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high-power applications. The
CPC3701 is a highly reliable FET device that has
been used extensively in our Solid State Relays for
industrial and security applications.
The CPC3701 has a minimum breakdown voltage of
60V, and is available in the SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
?
Solid State Relays
?
?
?
Converters
Security
Power Supplies
Ordering Information
Part # Description
CPC3701C N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 400,
600, and 800 Only (see Note 1)
CPC3701CTR N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Note 1: Orders for 1000 or greater must be for the "CTR" part option
and in increments of 1000.
Package Pinout (SOT-89)
G
D
D
Circuit Symbol
G
D
Pb
S
e 3
S
DS-CPC3701-R04
www.ixysic.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPC3703 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode Vertical DMOS FET |
| CPC3703_12 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode Vertical DMOS FET |
| CPC3703C | 功能描述:MOSFET N Channel Depletion Mode FET, 250V SOT-89 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPC3703CTR | 功能描述:MOSFET N Channel Depletion Mode FET, T/R, 250V SOT-89 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPC3703ZTR | 功能描述:MOSFET N-CH 250V SOT-89 制造商:ixys integrated circuits division 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:耗尽模式 漏源极电压（Vdss）:250V 电流 - 连续漏极（Id）（25°C 时）:- 不同?Id，Vgs 时的?Rds On（最大值）:4 欧姆 @ 200mA，0V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:- 不同 Vds 时的输入电容（Ciss）:350pF @ 25V 功率 - 最大值:1.1W 工作温度:-55°C ~ 125°C（TJ） 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1,000 |
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