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参数资料
| 型号： | CPC3701CTR |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DEPLETION 250V SOT89 |
| 标准包装： | 1,000 |
| 系列： | * |
I NTEGRATED C IRCUITS D IVISION
CPC3701
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to
the latest version of the joint industry standard, IPC/JEDEC J-STD-020 , in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033 .
Device
CPC3701C
Moisture Sensitivity Level (MSL) Rating
MSL 1
ESD Sensitivity
This product is ESD Sensitive , and should be handled according to the industry standard JESD-625 .
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
CPC3701C
Maximum Temperature x Time
260oC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPC3703 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode Vertical DMOS FET |
| CPC3703_12 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode Vertical DMOS FET |
| CPC3703C | 功能描述:MOSFET N Channel Depletion Mode FET, 250V SOT-89 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPC3703CTR | 功能描述:MOSFET N Channel Depletion Mode FET, T/R, 250V SOT-89 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPC3703ZTR | 功能描述:MOSFET N-CH 250V SOT-89 制造商:ixys integrated circuits division 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:耗尽模式 漏源极电压（Vdss）:250V 电流 - 连续漏极（Id）（25°C 时）:- 不同?Id，Vgs 时的?Rds On（最大值）:4 欧姆 @ 200mA，0V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:- 不同 Vds 时的输入电容（Ciss）:350pF @ 25V 功率 - 最大值:1.1W 工作温度:-55°C ~ 125°C（TJ） 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1,000 |
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