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参数资料
| 型号： | CPC3701CTR |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DEPLETION 250V SOT89 |
| 标准包装： | 1,000 |
| 系列： | * |
I NTEGRATED C IRCUITS D IVISION
Absolute Maximum Ratings @ 25oC
CPC3701
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Total Package Dissipation 1
Operational Temperature
Storage Temperature
1
Mounted on 1"x1" FR4 board.
Ratings
60
±15
1
1.1
-55 to +125
-55 to +125
Units
V P
V P
A
W
o C
o C
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @ 25oC (Unless Otherwise Noted)
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in V GS(off) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in R DS(on) with Temperature
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Voltage Drop
Thermal Resistance (Junction to Ambient)
Symbol
V (BR)DSX
V GS(off)
dV GS(off) /dT
I GSS
I D(off)
I DSS
R DS(on)
dR DS(on) /dT
t d(on)
t r
t d(off)
t f
V SD
R ? JA
Conditions
V GS = -5V, I D =100μA
V DS = 5V, I D =1 ? A
V DS = 5V, I D =1 ? A
V GS =±15V, V DS =0V
V GS = -5V, V DS =60V
V GS = -5V, V DS =40V, T A =125oC
V GS = 0V, V DS =15V
V GS = 0V, I D =300mA
V DS = 25V
I D = 300mA
V GS = 0V to -10V
R gen = 50 ?
V GS = -5V, I SD =300mA
-
Min
60
-0.8
-
-
-
-
600
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
90
Max
-
-2.9
4.5
100
1
1
-
1
1.1
70
40
50
150
1.8
-
Units
V
V
mV/ o C
nA
μA
mA
mA
?
%/ o C
ns
V
oC/W
Switching Waveform & Test Circuit
V DD
0V
90%
PULSE
R L
INPUT
GENERATOR
OUTPUT
-10V
10%
t on
t off
R gen
V DS
t d(on)
90%
tf
t d(off)
tr
90%
INPUT
D.U.T.
OUTPUT
0V
10%
10%
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPC3703 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode Vertical DMOS FET |
| CPC3703_12 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode Vertical DMOS FET |
| CPC3703C | 功能描述:MOSFET N Channel Depletion Mode FET, 250V SOT-89 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPC3703CTR | 功能描述:MOSFET N Channel Depletion Mode FET, T/R, 250V SOT-89 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPC3703ZTR | 功能描述:MOSFET N-CH 250V SOT-89 制造商:ixys integrated circuits division 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:耗尽模式 漏源极电压（Vdss）:250V 电流 - 连续漏极（Id）（25°C 时）:- 不同?Id，Vgs 时的?Rds On（最大值）:4 欧姆 @ 200mA，0V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:- 不同 Vds 时的输入电容（Ciss）:350pF @ 25V 功率 - 最大值:1.1W 工作温度:-55°C ~ 125°C（TJ） 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1,000 |
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