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参数资料
| 型号： | CPC3710CTR |
| 厂商： | CLARE INC |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 220 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 412K |
| 代理商： | CPC3710CTR |
www.clare.com
DS-CPC3710C-R00A.8
1
PRELIMINAR
Y
CPC3710C
N-Channel Depletion-Mode
Vertical DMOS FETs
Part #
Description
CPC3710C
SOT-89 (100/Tube)
CPC3710CTR
SOT-89 (2000/Reel)
BV
DSX/
BV
DGX
R
DS(ON)
(max)
I
DSS (min)
Package
250V
10
220mA
SOT-89
Applications
Features
Description
Ordering Information
Package Pinout
Ignition modules
Normally-on switches
Solid state relays
Converters
Telecommunications
Power supply
Depletion mode device offers low R
DS(ON) at cold
temperatures
Low on resistance 10 ohms max. at 25C
High input impedance
High breakdown voltage 250V
Low V
GS(off) voltage -1.6 to -3.9V
Small package size SOT-89
The CPC3710C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3710C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3710C offers a low 10 ohm maximum on-
state resistance at 25C.
The CPC3710C has a minimum breakdown voltage of
250V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
(SOT-89)
G
D
S
D
Switching Waveform
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tF
tr
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
Test Circuit
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tF
tr
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPC3714 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode FET |
| CPC3714C | 功能描述:固态继电器-PCB安装 N Channel Depletion Mode FET, 250V SOT-89 RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC3714CTR | 功能描述:固态继电器-PCB安装 N Channel Depletion Mode FET, T/R, 250V SOT-89 RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC3720 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode FET |
| CPC3720C | 功能描述:固态继电器-PCB安装 N Channel Depletion Mode FET, 250V SOT-89 RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
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