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参数资料
| 型号： | CPC3720CTR |
| 厂商： | CLARE INC |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 130 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 429K |
| 代理商： | CPC3720CTR |
www.clare.com
DS-CPC3720C-R00A.7
1
PRELIMINAR
Y
CPC3720C
N-Channel Depletion-Mode
Vertical DMOS FETs
Part #
Description
CPC3720C
SOT-89 (100/Tube)
CPC3720CTR
SOT-89 (2000/Reel)
BV
DSX/
BV
DGX
R
DS(ON)
(max)
I
DSS (min)
Package
350V
22
130mA
SOT-89
Applications
Features
Description
Ordering Information
Package Pinout
Ignition modules
Normally-on switches
Solid state relays
Converters
Telecommunications
Power supply
Depletion mode device offers low R
DS(ON) at cold
temperatures
Low on resistance 22 ohms max. at 25C
High input impedance
High breakdown voltage 350V
Low V
GS(off) voltage -1.6 to -3.9V
Small package size SOT-89
The CPC3720C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3720C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3720C offers a low 20 ohm maximum on-
state resistance at 25C.
The CPC3720C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
(SOT-89)
G
D
S
D
Switching Waveform
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tF
tr
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tF
tr
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
Test Circuit
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相关代理商/技术参数 |
参数描述 |
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| CPC3730 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode FET |
| CPC3730C | 功能描述:固态继电器-PCB安装 N Channel Depletion Mode FET, 250V SOT-89 RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC3730CTR | 功能描述:固态继电器-PCB安装 N Channel Depletion Mode FET, T/R, 250V SOT-89 RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC3816 | 制造商:Pentair Technical Products / Hoffman 功能描述:Side Panels for 38'' high White, fits 48.00x15.00, Steel |
| CPC3902CTR | 功能描述:MOSFET N-CH 250V TO-243AA 制造商:ixys integrated circuits division 系列:- 包装:带卷（TR） 零件状态:在售 FET 类型:N 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:250V 电流 - 连续漏极（Id）（25°C 时）:- 驱动电压（最大 Rds On，最小 Rds On）:0V 不同 Id 时的 Vgs（th）（最大值）:- Vgs（最大值）:±15V 不同 Vds 时的输入电容（Ciss）（最大值）:230pF @ 20V FET 功能:耗尽模式 功率耗散（最大值）:1.8W（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:2.5 欧姆 @ 300mA， 0V 工作温度:125°C（TJ） 安装类型:表面贴装 供应商器件封装:SOT-89 封装/外壳:TO-243AA 标准包装:1,000 |
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