参数资料
型号: CPC3720CTR
厂商: CLARE INC
元件分类: 小信号晶体管
中文描述: 130 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SOT-89, 3 PIN
文件页数: 2/4页
文件大小: 429K
代理商: CPC3720CTR
www.clare.com
2
CPC3720C
R00A.7
PRELIMINAR
Y
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Absolute Maximum Ratings (@ 25 C)
Electrical Characteristics
Parameter
Ratings
Units
Drain-to-Source Voltage
350
V
Gate-to-Source Voltage
±20
V
Total Package Dissipation
1.61
W
Operational Temperature
-55 to +125
C
Storage Temperature
-55 to +125
C
1 Mounted on FR4 board 1"x1"x0.062"
Package
I
D (continuous)
I
D (pulsed)
Power Dissipation @TA=25C
θjcC/W
I
DR
I
DRM
SOT-89
130mA
600mA
1.6W1
15
130mA
600mA
1 Mounted on FR4 board 1"x1"x0.062"
Thermal Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-to-Source Breakdown Voltage
BV
DSX
V
GS= -5V, ID=100A
350
-
V
Gate-to-Source Off Voltage
V
GS(off)
V
DS= 10V, ID=1mA
-1.6
-2.4
-3.9
V
Change in V
GS(off) with Temperatures
d
VGS(off)/dT
V
DS= 10V, ID=1mA
-
3.3
mV/C
Gate Body Leakage Current
I
GSS
V
GS=±20V, VDS=0V
-
100
nA
Drain-to-Source Leakage Current
I
D(off)
V
GS= -5V, VDS=Max Rating
-
1
A
V
GS= -5V, VDS=0.8 Max Rating TA=125C
-
1
mA
Saturated Drain-to-Source Current
I
DSS
V
GS= 0V, VDS=15V
130
-
mA
Static Drain-to-Source ON-State Resistance
R
DS(on)
V
GS= 0V, ID=130mA
-
22
Change in R
DS(on) with Temperatures
dR
DS(on)/dT
V
GS= 0V, ID=130mA
-
0.9
%/C
Forward Transconductance
G
FS
I
D= 100mA, VDS = 10V
225
-
m
Input Capacitance
C
ISS
V
GS= -5V
V
DS= 25V
f= 1Mhz
-
70
350
pF
Common Source Output Capacitance
C
OSS
20
60
Reverse Transfer Capacitance
C
RSS
10
60
Turn-ON Delay Time
t
d(on)
V
DD= 25V
I
D= 150mA
V
GS= 0V to -10V
R
GEN= 50
-
20
-
ns
Rise Time
t
r
10
Turn-OFF Delay Time
t
d(off)
20
Fall time
t
f
50
Source-Drain Diode Voltage Drop
V
SD
V
GS= -5V, ISD= 150mA
-
0.6
1.8
V
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