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| 型号： | CPC5603C |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 415V 5MA SOT-223 |
| 标准包装： | 200 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 耗尽模式 |
| 漏极至源极电压(Vdss)： | 415V |
| 电流 - 连续漏极(Id) @ 25° C： | 5mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 欧姆 @ 50mA，350mV |
| 输入电容 (Ciss) @ Vds： | 300pF @ 0V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 管件 |
| 其它名称： | CLA220 |
CPC5603
I NTEGRATED C IRCUITS D IVISION
N-Channel Depletion Mode FET
Parameter
Drain-to-Source Voltage - V DS
Max On-Resistance - R DS(on)
Max Power
Rating
415
14
2.5
Units
V
?
W
Description
The CPC5603 is an N-channel, depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance in an
Features
? 415V Drain-to-Source Voltage
? Depletion Mode Device Offers Low R DS(on)
at Cold Temperatures
? Low On-Resistance: 8 ? (Typical) @ 25°C
? Low V GS(off) Voltage: -2.0V to -3.6V
? High Input Impedance
? Low Input and Output Leakage
? Small Package Size SOT-223
? PC Card (PCMCIA) Compatible
? PCB Space and Cost Savings
economical silicon gate process. The vertical DMOS
process yields a highly reliable device particularly
in difficult application environments such as
telecommunications, security, and power supplies.
One of the primary applications for the CPC5603 is
as a linear regulator/hook switch for the LITELINK?
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8 ? , a
drain-to-source voltage of 415V and is available in
the SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and
thermal-induced secondary breakdown.
Applications
? Support Component for LITELINK?
Ordering Information
Data Access Arrangement (DAA)
? Telecom
? Normally-On Switches
Part #
CPC5603C
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Cut-Tape, Available in Quantities of 200, 400,
? Ignition Modules
? Converters
? Security
? Power Supplies
600, and 800 Only (see Note 1)
CPC5603CTR N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
Note 1: Orders for 1000 or greater must be for the "CTR" part option
and in increments of 1000.
Package Pinout
D
4
1
2 3
G
D
S
Pin Number Name
1 GATE
2 DRAIN
3 SOURCE
4 DRAIN
Pb
e 3
DS-CPC5603-R07
www.ixysic.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPC5603CTR | 功能描述:MOSFET N Channel Depletion Mode FET, T/R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPC5604 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:Optical Data Access Arrangement I.C. |
| CPC5604A | 功能描述:固态继电器-PCB安装 LITELINK I RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC5604ATR | 功能描述:固态继电器-PCB安装 LITELINK I, T/R RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC5608N | 功能描述:固态继电器-PCB安装 TRANSISTOR ARRAY I.C. RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
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