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参数资料
| 型号： | CPH3348-TL-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3A CPH3 |
| 产品目录绘图： | CHP3 Package P-Channel & N-Channel Top |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 1.5A，4.5V |
| 闸电荷(Qg) @ Vgs： | 5.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 405pF @ 6V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-96 |
| 供应商设备封装： | 3-CPH |
| 包装： | 标准包装 |
| 产品目录页面： | 1536 (CN2011-ZH PDF) |
| 其它名称： | 869-1130-6 |
CPH3348
Note on usage : Since the CPH3348 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0922-7/7
相关PDF资料 |
PDF描述 |
|---|---|
| CPH3350-TL-H | MOSFET P-CH 20V 3A CPH3 |
| CPH3351-TL-H | MOSFET P-CH 60V 1.8A CPH3 |
| CPH3356-TL-H | MOSFET P-CH 20V 2.5A CPH3 |
| CPH3360-TL-H | MOSFET P-CH 30V 1.6A CPH3 |
| CPH3448-TL-H | MOSFET N-CH 30V 4A CPH3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CPH3348-TL-W | 功能描述:MOSFET P-CH 12V 3A CPH3 制造商:on semiconductor 系列:- 包装:剪切带（CT） 零件状态:有效 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:逻辑电平栅极，1.8V 驱动 漏源极电压（Vdss）:12V 电流 - 连续漏极（Id）（25°C 时）:3A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:70 毫欧 @ 1.5A，4.5V 不同 Id 时的 Vgs（th）（最大值）:1.4V @ 1mA 不同 Vgs 时的栅极电荷（Qg）:5.6nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:405pF @ 6V 功率 - 最大值:1W 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:3-CPH 标准包装:1 |
| CPH3350 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH3350_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH3350-TL-H | 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| CPH3350-TL-W | 制造商:ON Semiconductor 功能描述:PCH 1.8V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH 1.8V DRIVE SERIES |
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