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| 型号： | CTLM1074-M832D |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 中文描述： | 1 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 3 x 2 mm, ROHS COMPLIANT, 8 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 236K |
| 代理商： | CTLM1074-M832D |
MAXIMUM RATINGS (TLM832D Package): (TA=25°C) SYMBOL
UNITS
Power Dissipation*
PD
1.65
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
76
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
1.0
A
Peak Repetitive Forward Current, tp<1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100μA
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100μA
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
25
50
mV
VCE(SAT)
IC=100mA, IB=10mA
40
75
mV
CTLM1074-M832D
MULTI DISCRETE MODULE
SURFACE MOUNT
LOW VCE (SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY RECTIFIER
TLM832D CASE
Central
Semiconductor Corp.
TM
R1 (22-July 2008)
MARKING CODE:
CFD
TM
Bottom View
Top View
APPLICATIONS
Switching Circuits
DC / DC Converters
LCD Backlighting
Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
DESCRIPTION: The Central Semiconductor Corp.
CTLM1074-M832D consists of a Low VCE (SAT) PNP
Transistor and a Low VF Schottky Rectifier. Packaged
in a small, thermally efficient, leadless 3x2mm surface
mount case, it is designed for applications where small
size, operational efficiency, and low energy
consumption are the prime requirements. Due to its
leadless package design this device is capable of
dissipating up to 4 times the power of similar devices in
comparable sized surface mount packages.
FEATURES
Dual Chip Device
High Current (1.0A) Transistor and Schottky Rectifier
Low VCE(SAT) PNP Transistor
(450mV @ IC = 1.0A Max)
Low VF Schottky Rectifier (550mV @ 1.0A Max)
High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
Small TLM 3x2mm Leadless Surface Mount Package
Complementary Device CTLM1034-M832D
*FR-4 Epoxy PCB with copper mounting pad area of 54mm
2
相关PDF资料 |
PDF描述 |
|---|---|
| CTLM3474-M832D | |
| CTLM3410-M832D | |
| CTLM7410-M832D | |
| CWA2490H | |
| CWA4850H | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CTLM1074-M832D_10 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:SURFACE MOUNT SILICON LOW VCE(SAT) PNP TRANSISTOR AND LOW VF SCHOTTKY RECTIFIER |
| CTLM3410-M832D | 功能描述:两极晶体管 - BJT SMD Small Signal Transistor Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CTLM3474-M832D | 功能描述:两极晶体管 - BJT Small Sig Transistor Dual NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CTLM7110-M832D | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER |
| CTLM7410-M832D | 功能描述:两极晶体管 - BJT SMD Small Signal Transistor Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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