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参数资料
| 型号： | CY7C109BL-15VC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K x 8 Static RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 封装： | 0.400 INCH, SOJ-32 |
| 文件页数： | 10/10页 |
| 文件大小： | 367K |
| 代理商： | CY7C109BL-15VC |
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *C
Page 9 of 10
Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
All product and company names mentioned in this document may be the trademarks of their respective holders
Package Diagrams (continued)
51-85056-*D
32-pin TSOP Type I (8 x 20 mm) (51-85056)
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C109BL-15VI | 128K x 8 Static RAM |
| CY7C109BL-15ZC | 128K x 8 Static RAM |
| CY7C1157V18-333BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-333BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-333BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C109BN-12VC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C109BN-12ZC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C109BN-12ZXC | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| CY7C109BN-12ZXCT | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| CY7C109BN-15VC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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