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参数资料
型号： CY7C109BL-15VC
厂商： CYPRESS SEMICONDUCTOR CORP
元件分类： SRAM
英文描述： 128K x 8 Static RAM
中文描述： 128K X 8 STANDARD SRAM, 15 ns, PDSO32
封装： 0.400 INCH, SOJ-32
文件页数： 3/10页
文件大小： 367K
代理商： CY7C109BL-15VC
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *C
Page 2 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND
[3] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[3] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[3].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Selection Guide
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
7C109B-20
7C1009B-20
Unit
Maximum Access Time
12
15
20
ns
Maximum Operating Current
90
80
75
mA
Maximum CMOS Standby Current
10
mA
Maximum CMOS Standby Current (L)
2
mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
°C to +70°C
5V
± 10%
Industrial
40°C to +85°C
5V
± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
7C109B-20
7C1009B-20
Unit
Min.
Max.
Min.
Max.
Min.
Max.
VOH
Output HIGH Voltage VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.3
2.2
VCC + 0.3
2.2
VCC + 0.3
V
VIL
Input LOW Voltage[3]
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
–1
+1
–1
+1
–1
+1
A
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
–5
+5
–5
+5
–5
+5
A
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
90
80
75
mA
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. VCC, CE1 > VIH
or CE2 < VIL,VIN > VIH or
VIN < VIL, f = fMAX
45
40
30
mA
ISB2
Automatic CE
Power-Down Current
—CMOS Inputs
Max. VCC,
CE1 > VCC – 0.3V,
or CE2 < 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
10
mA
L2
mA
Capacitance[4]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
9pF
COUT
Output Capacitance
8
pF
Notes:
3. Minimum voltage is–2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
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相关代理商/技术参数
参数描述
CY7C109BN-12VC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C109BN-12ZC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C109BN-12ZXC 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2
CY7C109BN-12ZXCT 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2
CY7C109BN-15VC 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
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