参数资料
型号: CY7C109BL-15ZC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 128K x 8 Static RAM
中文描述: 128K X 8 STANDARD SRAM, 15 ns, PDSO32
封装: 8 X 20 MM, TSOP1-32
文件页数: 12/12页
文件大小: 221K
代理商: CY7C109BL-15ZC
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *A
Page 9 of 12
Ordering Information
Speed
(ns)
Ordering Code
Package
Name
Package Type
Operating
Range
12
CY7C109B-12VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-12VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-12ZC
Z32
32-Lead TSOP Type I
15
CY7C109B-15VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C109BL-15VC
V33
32-Lead (400-Mil) Molded SOJ
CY7C1009B-15VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-15ZC
Z32
32-Lead TSOP Type I
CY7C109BL-15ZC
Z32
32-Lead TSOP Type I
CY7C109B-15VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
CY7C109BL-15VI
V33
32-Lead (400-Mil) Molded SOJ
CY7C1009B-15VI
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-15ZI
Z32
32-Lead TSOP Type I
20
CY7C109B-20VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-20VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-20VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
CY7C109B-20ZC
Z32
32-Lead TSOP Type I
Commercial
CY7C109B-20ZI
Z32
32-Lead TSOP Type I
Industrial
25
CY7C109B-25VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-25VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-25VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
CY7C109B-25ZC
Z32
32-Lead TSOP Type I
Commercial
CY7C109B-25ZI
Z32
32-Lead TSOP Type I
Industrial
35
CY7C109B-35VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-35VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-35VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
相关PDF资料
PDF描述
CY7C1157V18-333BZC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1157V18-333BZI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1157V18-333BZXC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1157V18-333BZXI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1157V18-375BZC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
相关代理商/技术参数
参数描述
CY7C109BN-12VC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C109BN-12ZC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C109BN-12ZXC 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M(8Mx32) 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:带卷 (TR) 其它名称:557-1327-2
CY7C109BN-12ZXCT 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M(8Mx32) 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:带卷 (TR) 其它名称:557-1327-2
CY7C109BN-15VC 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: