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参数资料
| 型号： | CY7C109BL-15ZC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K x 8 Static RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 封装： | 8 X 20 MM, TSOP1-32 |
| 文件页数： | 5/12页 |
| 文件大小： | 221K |
| 代理商： | CY7C109BL-15ZC |
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *A
Page 2 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND
[2] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[2].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
°C to +70°C
5V
± 10%
Industrial
40°C to +85°C
5V
± 10%
Electrical Characteristics Over the Operating Range
Test Conditions
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
Parameter
Description
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage VCC = Min.,
IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min.,
IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
+ 0.3
2.2
VCC
+ 0.3
V
VIL
Input LOW Voltage[2]
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
–1+1
A
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
–5+5
A
IOS
Output Short
Circuit Current[3]
VCC = Max.,
VOUT = GND
–300
mA
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
90
80
mA
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. VCC, CE1 > VIH
or CE2 < VIL,
VIN > VIH or
VIN < VIL, f = fMAX
45
40
mA
ISB2
Automatic CE
Power-Down Current
—CMOS Inputs
Max. VCC,
CE1 > VCC – 0.3V,
or CE2 < 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
10
mA
L2
2
mA
Notes:
2.
Minimum voltage is–2.0V for pulse durations of less than 20 ns.
3.
Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C109BN-12VC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C109BN-12ZC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C109BN-12ZXC | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| CY7C109BN-12ZXCT | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| CY7C109BN-15VC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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