参数资料
型号: CY7C1472BV25-250BZXI
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 4M X 18 ZBT SRAM, 3 ns, PBGA165
封装: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件页数: 9/29页
文件大小: 884K
代理商: CY7C1472BV25-250BZXI
CY7C1470BV25
CY7C1472BV25, CY7C1474BV25
Document #: 001-15032 Rev. *D
Page 17 of 29
Table 8. Identification Codes
Instruction
Code
Description
EXTEST
000
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO. This
operation does not affect SRAM operations.
SAMPLE Z
010
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload function and
is therefore not 1149.1-compliant.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM operations.
Table 9. Boundary Scan Exit Order (2M x 36)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
C121
R341
J11
61
B7
2D1
22
P2
42
K10
62
B6
3E1
23
R4
43
J10
63
A6
4D2
24
P6
44
H11
64
B5
5E2
25
R6
45
G11
65
A5
6F1
26
R8
46
F11
66
A4
7G1
27
P3
47
E11
67
B4
8
F2
28
P4
48
D10
68
B3
9G2
29
P8
49
D11
69
A3
10
J1
30
P9
50
C11
70
A2
11
K1
31
P10
51
G10
71
B2
12
L1
32
R9
52
F10
13
J2
33
R10
53
E10
14
M1
34
R11
54
A9
15
N1
35
N11
55
B9
16
K2
36
M11
56
A10
17
L2
37
L11
57
B10
18
M2
38
M10
58
A8
19
R1
39
L10
59
B8
20
R2
40
K11
60
A7
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