参数资料
型号: CY7C1481V25-100AXC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
中文描述: 2M X 36 CACHE SRAM, 8.5 ns, PQFP100
封装: 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件页数: 24/30页
文件大小: 1028K
代理商: CY7C1481V25-100AXC
CY7C1481V25
CY7C1483V25
CY7C1487V25
Document #: 38-05281 Rev. *H
Page 24 of 30
Read/Write Cycle Timing
[22, 24, 25]
Timing Diagrams
(continued)
tCYC
tCL
CLK
tADH
tADS
ADDRESS
t
CH
tAH
tAS
A2
tCEH
tCES
Single WRITE
D(A3)
A3
A4
BURST READ
Back-to-Back READs
High-Z
Q(A2)
Q(A4)
Q(A4+1)
Q(A4+2)
Q(A4+3)
tWEH
tWES
tOEHZ
tDH
tDS
tCDV
tOELZ
A1
A5
A6
D(A5)
D(A6)
Q(A1)
Back-to-Back
WRITEs
DON’T CARE
UNDEFINED
ADSP
ADSC
BWE, BW
X
CE
ADV
OE
Data In (D)
Data Out (Q)
Notes
24.The data bus (Q) remains in high-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC.
25.GW is HIGH.
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相关PDF资料
PDF描述
CY7C1481V25-100AXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-100BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-100BZI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-100BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-100BZXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
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