型号 | 厂商 | 描述 |
jan1n4114 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4114c 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4114cur 2 |
Microsemi Corporation | Dual supply translating transceiver; 3-state |
jan1n4114cur-1 2 |
MICROSEMI CORP-SCOTTSDALE | Dual supply translating transceiver; 3-state |
jan1n4114curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4114curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4114d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4114dur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4114dur-1 2 |
MICROSEMI CORP-SCOTTSDALE | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4114durtr 2 |
Microsemi Corporation | Dual supply translating transceiver; 3-state |
jan1n4114durtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4114ur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4114urtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4114urtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4115 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4115c 2 |
MICROSEMI CORP-SCOTTSDALE | 20-bit registered driver with inverted register enable with 15 Ohm termination resistors (3-State) - Description: 20-Bit Registered Driver with Inverted Register Enable, 15 Ohm Termination Resistors, and 3.6V Tolerant I/Os (3-State) ; Logic switching levels: CMOS ; Number of pins: 56 ; Output drive capability: Medium ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2 ns; Voltage: Low |
jan1n4115cur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4116urtr 2 |
Microsemi Corporation | Quad 2-input AND gate - Description: Quad 2-Input AND Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 7@5V ns; Voltage: 2.0-6.0 V |
jan1n4116urtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120cur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120cur-1 2 |
MICROSEMI CORP | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4120dur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120durtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120durtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120ur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120urtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4120urtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4121 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4121c 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4121cur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4121cur-1 2 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4121curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4121curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4121d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4121dur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4121dur-1 2 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4123c 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4123cur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4123cur-1 2 |
MICROSEMI CORP | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4123curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4123curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4123d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4123dur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4123dur-1 2 |
MICROSEMI CORP-LAWRENCE | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4123durtr 2 |
Microsemi Corporation | Quad D-type flip-flop; positive-edge trigger; 3-state - Description: Quad D-Type Flip-Flop; Postive-Edge Trigger; 3-State ; F<sub>max</sub>: 88 MHz; Logic switching levels: CMOS ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |
jan1n4123durtr-1 2 |
Microsemi Corporation | Quad D-type flip-flop; positive-edge trigger; 3-state - Description: Quad D-Type Flip-Flop; Postive-Edge Trigger; 3-State ; F<sub>max</sub>: 88 MHz; Logic switching levels: CMOS ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |
jan1n4123ur 2 |
Microsemi Corporation | Quad D-type flip-flop; positive-edge trigger; 3-state - Description: Quad D-Type Flip-Flop; Postive-Edge Trigger; 3-State ; F<sub>max</sub>: 88 MHz; Logic switching levels: CMOS ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |