型号 厂商 描述
tmx320c6712gls100
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Texas Instruments, Inc. FIXED-POINT DIGITAL SIGNAL PROCESSOR
tmx320c6712glw100
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Texas Instruments, Inc. FIXED-POINT DIGITAL SIGNAL PROCESSOR
tmp320lc50kgd
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Texas Instruments, Inc. DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE
tmp47c102m
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c102p
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.55 to 4.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c202m
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.69 to 4.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c202p
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.37; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c103m
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.04; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c103n
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.98 to 5.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c203m
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.14 to 5.37; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c203n
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.92; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c206m
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c206p
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.49 to 5.73; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp47c421af
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Toshiba Corporation CMOS 4-BIT MICROCONTOROLLER
tmp47c221
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Transient Voltage Suppressor Diodes
tmp47c421
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Transient Voltage Suppressor Diodes
tmp47c221af
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Toshiba Corporation CMOS 4-BIT MICROCONTOROLLER
tmp47c634
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Toshiba Corporation 4-BIT SINGLE-CHIP MICROCONTROLLER FOR SMALL GENERAL-PURPOSE INFRARED REMOTE CONTROL TRANSMITTER
tmp8155p
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Transient Voltage Suppressor Diodes
tmp8156p
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Transient Voltage Suppressor Diodes
tmp86c847ug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 15.7 to 16.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86ch06aug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.87 to 4.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp86ch09ng
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 34.00 to 38.00; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp86ch12mg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.01 to 4.48; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp86ch21aug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.01 to 4.21; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp86ch22ug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.15 to 4.34; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp86ch29bfg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.28 to 4.48; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp86ch29bug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
tmp86ch46ang
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 16.3 to 17.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86ch47aug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 16.9 to 17.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86ch47iug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 17.5 to 18.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86ch47sug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 18.1 to 19.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86ch49fg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 18.8 to 19.7; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86ch72fg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 19.5 to 20.4; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86ck74afg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 20.2 to 21.1; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm23aug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 20.9 to 21.9; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm27fg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 21.6 to 22.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm29bfg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 22.3 to 23.3; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm29bug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 22.9 to 24.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm29lug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 23.6 to 24.7; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm46ang
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 24.3 to 25.5; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm49fg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 25.2 to 26.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm49ng
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 26.2 to 27.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm49ug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 27.2 to 28.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm72fg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.6 to 1.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cm74afg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.7 to 1.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cp23aug
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.8 to 2.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cp27afg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.9 to 2.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cs25adfg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.0 to 2.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
tmp86cs25afg
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Toshiba Corporation Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.2 to 2.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35