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| 型号： | DEMO9S08JS16 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 31/32页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO FOR JS16 FAMILY |
| 标准包装： | 1 |
| 类型： | MCU |
| 适用于相关产品： | MC9S08JS16 |
| 所含物品： | 2 个板，线缆，文档，DVD |
| 产品目录页面： | 730 (CN2011-ZH PDF) |
| 相关产品： | MC9S08JS16CWJ-ND - IC MCU 8BIT 16K FLASH 20SOIC MC9S08JS16CFK-ND - IC MCU 8BIT 16K FLASH 24QFN |
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MC9S08JS16 Series MCU Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
8
PD = Pint + PI/OPint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
3.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
3.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table 5. ESD Protection Characteristics
Parameter
Symbol
Value
Unit
ESD Target for Machine Model (MM) — MM circuit
description
VTHMM
200
V
ESD Target for Human Body Model (HBM) — HBM
circuit description
VTHHBM
2000
V
Table 6. DC Characteristics
Num C
Parameter
Symbol
Min
Typical1
Max
Unit
1
Operating voltage2
—
2.7
—
5.5
V
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| DEMO9S08LC60 | 功能描述:开发板和工具包 - S08 / S12 DEMO BOARD FOR 9S08LC60 RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| DEMO9S08LG32 | 功能描述:开发板和工具包 - S08 / S12 DEMO BOARD FOR LG32 FAMI RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| DEMO9S08LG32 | 制造商:Freescale Semiconductor 功能描述:MC9S08LG32 Demonstration board |
| DEMO9S08LIN | 功能描述:子卡和OEM板 LIN DAUGHTER BOARD RoHS:否 制造商:BeagleBoard by CircuitCo 产品:BeagleBone LCD4 Boards 用于:BeagleBone - BB-Bone - Open Source Development Kit |
| DEMO9S08LL16 | 功能描述:开发板和工具包 - S08 / S12 DEMO BOARD FOR LL16 RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
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