参数资料
型号: DFLS1100-7
厂商: Diodes Inc
文件页数: 2/5页
文件大小: 193K
描述: DIODE SCHOTTKY 1A 100V PWRDI123
其它图纸: DFL(R,U,S,), SBR(2,3) Series Side
DFL(R,U,S,), SBR(2,3) Series Top
DFL(R,U,S,), SBR(2,3) Series Bottom
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 770mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 1µA @ 100V
电容@ Vr, F: 36pF @ 5V,1MHz
安装类型: 表面贴装
封装/外壳: 2-SMD,扁平引线
供应商设备封装: PowerDI? 123
包装: 标准包装
产品目录页面: 1591 (CN2011-ZH PDF)
其它名称: DFLS1100DIDKR
DFLS1100
Document number: DS30497 Rev. 11 - 2
2 of 5
www.diodes.com
September 2013
? Diodes Incorporated
DFLS1100
POWERDI is a registered trademark of Diodes Incorporated.
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
RMS Reverse Voltage
VR(RMS)
71 V
Forward current rms (TC
= +160°C, D = 0.5)
IF(RMS)
2 A
Average Forward Current
IF(AV)
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
50 A
Repetitive peak reverse current
tp = 2μs, f = I kHz square
IRRM
1.0 A
Repetitive Peak Avalanche Power
tp = 1?s, TJ
= +25°C
PARM
1500 W
Non-repetitive peak reverse current
tp = 100μs square
IRSM
1.0 A
Critical rate of rise of reverse voltage (rated VR, TJ
= +25°C)
dV/dt 10000 V/μs
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Soldering (Note 5)
R?JS
— 7
125 — °C/W
Thermal Resistance Junction to Ambient (Note 6) TA
= +25°C
R?JA
Thermal Resistance Junction to Case (Note 6) TA
= +25°C
R?JC
21 —
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
?C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
100
?
?
V
IR
= 1
?A
Forward Voltage
VF
?
?
0.77
V
IF
= 1.0A, T
A
= +25
?C
??
0.58?
0.62
IF
= 1.0A, T
A
= +125
?C
?? ??
0.86
IF
= 2.0A, T
A
= +25
?C
??
0.65?
0.7
IF
= 2.0A, T
A
= +125
?C
Leakage Current (Note 7)
IR
?
?
1
?A
VR
= 100V, T
A
= +25
?C
??
0.2 0.5 mA VR
= 100V, T
A
= +125
?C
Total Capacitance
CT
?
36
?
pF
VR
= 5V
DC, f = 1MHz
Notes: 5. Theoretical RθJS
calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
6. Part mounted on FR-4 board with 2 oz., minimum recommended c
opper pad layout, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
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