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| 型号： | DG508BEQ-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 16/20页 |
| 文件大小： | 0K |
| 描述： | IC MUX 8CHAN PREC 16-TSSOP |
| 标准包装： | 1 |
| 功能： | 多路复用器 |
| 电路： | 1 x 8:1 |
| 导通状态电阻： | 500 欧姆 |
| 电压电源： | 双电源 |
| 电压 - 电源，单路/双路(±)： | ±5 V ~ 20 V |
| 电流 - 电源： | 500µA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | DG508BEQ-T1-E3DKR |
Document Number: 64821
S10-2817-Rev. D, 20-Dec-10
www.vishay.com
5
Vishay Siliconix
DG508B, DG509B
Notes:
a. VAX, VEN = input voltage perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f.
R
DS(on) = RDS(on) max. - RDS(on) min.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (Single Supply 12 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V (± 10 %)
VAX, VEN = 2.0 V, 0.8 V
a
Temp.b
Typ.c
- 40 °C to 125 °C
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Channel On Leakage Current
ID(on)
V+ = 12 V, V- = 0 V
VS = VD = 0 V/10 V
DG508B
Room
- 11- 1
1
nA
Full
- 100
100
- 100
100
DG509B
Room
- 11- 1
1
Full
- 50
50
- 50
50
Digital Control
Logic High Input Voltage
VINH
Full
2.0
V
Logic Low Input Voltage
VINL
Full
0.8
Logic High Input Current
IIH
VAX, VEN = 2.0 V
Full
- 1
1
- 1
1
A
Logic Low Input Current
IIL
VAX, VEN = 0.8 V
Full
- 1
1
- 1
1
Logic Input Capacitancee
Cin
f = 1 MHz
Room
4
pF
Dynamic Characteristics
Transition Time
tTRANS
VS1 = 10 V/0 V, VS8 = 0 V/10 V,
RL = 1 M, CL = 35 pF
Room
165
400
ns
Full
550
500
Break-Before-Make Interval
tOPEN
VS1 = VS8 = 5 V, CL = 35 pF,
RL = 1 k
Room
37
15
Full
1
Enable Turn-On Time
tON(EN)
VS1 = 5 V, VS2 to VS8 = 0 V,
RL = 1 k, CL = 35 pF
Room
125
300
Full
550
425
Enable Turn-Off Time
tOFF(EN)
Room
75
250
Full
350
300
Charge Injectione
QINJ
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Full
2.5
pC
Off Isolatione
OIRR
CL = 5 pF, RL = 50
f = 1 MHz
Room
- 80
dB
Crosstalke
XTALK
Room
- 88
- 3 dB Bandwidthe
BW
RL = 50
Room
200
MHz
Total Harmonic Distortione
THD
RL = 10 k, 5 VRMS,
f = 20 Hz to 20 kHz
Room
0.26
%
Source Off Capacitancee
CS(off)
f = 1 MHz
Room
2
pF
Drain Off Capacitancee
CD(off)
DG508B
13
DG509B
8
Channel On Capacitancee
CD(on)
DG508B
17
DG509B
12
Power Supply
Power Supply Current
I+
VAX, VEN = 0 V, or V+
Room
0.01
0.5
mA
Full
0.6
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