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| 型号： | DMC3021LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V 8.5A/7A SO8 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A，7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 767pF @ 10V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMC3021LSD-13DIDKR |
DMC3021LSD
Maximum Ratings N-CHANNEL – Q2 (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Unit
V
V
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +85°C
I D
I DM
8.5
7.1
26
A
A
Maximum Ratings P-CHANNEL – Q1 (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±20
Unit
V
V
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +85°C
I D
I DM
-7.0
-4.5
-25
A
A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics N-CHANNEL – Q2 (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
—
—
—
—
—
—
1.0
±100
V
μA
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
|Y fs |
V SD
1
—
—
—
—
1.45
14
18
8.1
0.7
2.1
21
32
—
1.0
V
m ?
S
V
V DS = V GS , I C = 250 μ A
V GS = 10V, I C = 7A
V GS = 4.5V, I C = 5.6A
V DS = 5V, I C = 7A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
767
110
105
1.4
7.8
16.1
1.8
2.5
5.0
4.5
26.3
8.55
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, I D = 9A
V GS = 10V, V DS = 15V,
R G = 6 ? , I D = 1A
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
2 of 8
www.diodes.com
February 2014
? Diodes Incorporated
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