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| 型号： | DMG3420U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 5.47A SOT23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.47A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 29 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 434.7pF @ 10V |
| 功率 - 最大： | 740mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG3420U-7DIDKR |
DMG3420U
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Units
V
V
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Steady
State
T A = +25°C
T A = +85°C
I D
I DM
5.47
3.43
20
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
0.74
167
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
—
—
—
—
—
—
1.0
±100
V
μA
nA
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
0.5
0.95
1.2
V
V DS = V GS , I D = 250 μ A
21
29
V GS = 10V, I D = 6A
Static Drain-Source On-Resistance
R DS(ON)
—
25
34
35
48
m ?
V GS = 4.5V, I D = 5A
V GS = 2.5V, I D = 4A
65
91
V GS = 1.8V, I D = 2A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
—
—
9
0.75
—
1.0
S
V
V DS = 5V, I D = 3.8A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
434.7
69.1
61.2
1.53
5.4
0.9
1.5
6.5
8.3
21.6
5.3
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 6A
V DD = 10V, V GS = 5V,
R L = 1.7 ? , R G = 6 ?
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG3420U
Document number: DS31867 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
? Diodes Incorporated
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