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参数资料
| 型号： | DMG4413LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 10.5A SOP8L |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 4965pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG4413LSS-13DIDKR |
DMG4413LSS
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-30V
R DS(ON) max
7.5m ? @ V GS = -10V
10.2m ? @ V GS = -4.5V
I D max
T A = +25°C
-12A
-10A
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
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Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state
Mechanical Data
resistance (R DS(ON) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
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Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram below
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Backlighting
Power Management Functions
DC-DC Converters
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Terminals: Finish ? Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
Top View
S
S
S
G
Top View
Pin-out
D
D
D
D
G
D
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMG4413LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
P4413LS = Product Type Marking Code
P4413LS
YY WW
P4413LS
YY WW
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMG4413LSS
Document number: DS31754 Rev. 5 - 2
1 of 5
www.diodes.com
September 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG4435SSS-13 | MOSFET P-CH 30V 7.3A 8SOIC |
| DMG4466SSS-13 | MOSFET N-CH 30V 10A SO8 |
| DMG4466SSSL-13 | MOSFET N-CH 30V 10A SO8 |
| DMG4468LFG | MOSFET N-CH 30V 7.62A 8DFN |
| DMG4468LK3-13 | MOSFET N-CH 30V 9.7A TO252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG4435SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG4435SSS-13 | 功能描述:MOSFET MOSFET,P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG4466SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG4466SSS-13 | 功能描述:MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG4466SSSL | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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