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| 型号： | DMG4413LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 10.5A SOP8L |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 4965pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG4413LSS-13DIDKR |
DMG4413LSS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = -10V
Continuous Drain Current (Note 6) V GS = -4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
t<10s
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
I S
-12
-10
-22
-17
-10
-8
-18
-14
-100
-4
A
A
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady State
t<10s
T A = +25°C
T A = +70°C
Steady State
t<10s
Steady State
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.7
1.1
74
22
2.2
1.4
56
17
2.5
-55 to 150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-1
? 1
V
? A
? A
V GS = 0V, I D = -250μA
V DS = -30V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V GS(th)
R DS(ON)
g fs
V SD
-1.1
??
?
?
?
1.6
6.3
7.9
26
-0.7
-2.1
7.5
10.2
?
-1.0
V
m ?
S
V
V DS = V GS , I D = -250 ? A
V GS = -10V, I D = -13A
V GS = -4.5V, I D = -10A
V DS = -15V, I D = -13A
V GS = 0V, I S = -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
??
4965
1487
711
7.3
?
?
?
??
pF
pF
pF
?
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q G
Q GS
Q GD
t d(on)
t r
t d(off)
t f
??
??
??
??
??
??
??
46
17
16
15
9
160
66
??
??
??
??
??
??
??
nC
ns
V DS = -15V, V GS = -5V
I D = -13A
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0 ?
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG4413LSS
Document number: DS31754 Rev. 5 - 2
2 of 5
www.diodes.com
September 2013
? Diodes Incorporated
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