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参数资料
| 型号： | DMG4468LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.7A TO252 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 11.6A，10V |
| Id 时的 Vgs(th)（最大）： | 1.95V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.85nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 867pF @ 15V |
| 功率 - 最大： | 1.68W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4468LK3-13DIDKR |
DMG4468LK3
Features
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.33 grams (approximate)
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TOP VIEW
Ordering Information
Part Number
DMG4468LK3-13
(Note 4)
PIN OUT -TOP VIEW
Case
TO252
Equivalent Circuit
Packaging
2500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
= Manufacturer’s Marking
N4468L
YYWW
N4468L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01-52)
DMG4468LK3
Document number: DS31958 Rev. 3 - 2
1 of 6
www.diodes.com
June 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
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| DMG4496SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG4496SSS-13 | 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG4511SK4 | 制造商:Diodes Incorporated 功能描述:MOSFET NP CH COM PAIR 35V TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L, Transistor Polarity:N and P Channel, Continuous Drain Current Id:8.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:1.54W , RoHS Compliant: Yes |
| DMG4511SK4-13 | 功能描述:MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG4511SK4-7 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. |
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