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| 型号： | DMG4710SSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 12.7A SO8 |
| 标准包装： | 1 |
| 系列： | SiMFET |
| FET 型： | MOSFET N 通道，肖特基，金属氧化物! |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12.5 毫欧 @ 11.7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1849pF @ 15V |
| 功率 - 最大： | 1.54W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4710SSS-13DIDKR |
DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
Features
V (BR)DSS
R DS(on)
I D max
T A = 25°C (Note 5)
?
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
? Low R DS(ON) - minimizes conduction losses
30V
12.5m Ω @ V GS = 10V
14.8m Ω @ V GS = 4.5V
11.7A
10.8A
?
?
Low V SD - reducing the losses due to body diode conduction
Low Q rr - lower Q rr of the integrated Schottky reduces body
diode switching losses
?
?
Low gate capacitance (Q g /Q gs ) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – I AR and E AR rated
?
?
?
Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
DC-DC Converters
Power management functions
Top View
?
?
S
S
S
G
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
D
D
D
D
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMG4710SSS-13
1. No purposefully added lead.
Case
SO-8
Packaging
2500 / Tape & Reel
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
G4710SS
Part no.
YY WW
Xth week: 01 ~ 53
Year: “09” = 2009
1
4
Year: “10” = 2010
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
1 of 6
www.diodes.com
November 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG4712SSS-13 | MOSFET N-CH 30V 11.2A 8SOIC |
| DMG4800LFG-7 | MOSFET N-CH 30V 7.44A 8DFN |
| DMG4800LK3-13 | MOSFET N-CH 30V 10A TO252 |
| DMG4800LSD-13 | MOSFET 2N-CH 30V 8.54A SO8 |
| DMG4822SSD-13 | MOSFET DL N-CH 30V 10A SO-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG4712SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
| DMG4712SSS-13 | 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG4800LFG | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG4800LFG-7 | 功能描述:MOSFET ENHANCE MODE MOSFET 30V/4.82 - 7.44A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG4800LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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