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| 型号： | DMG4800LFG-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.44A 8DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 17 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.47nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 798pF @ 10V |
| 功率 - 最大： | 940mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-UDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN3030（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4800LFG-7DIDKR |
DMG4800LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
Polarity: See Diagram
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.0172 grams (approximate)
8
7
6
5
5
6
7
8
D
G
S
S
S
1
2
3
4
4
3
2
1
TOP VIEW
BOTTOM VIEW
TOP VIEW
Internal Schematic
BOTTOM VIEW
Pin Configuration
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
± 25
Units
V
V
Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 85°C
I D
I DM
7.44
4.82
40
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J, T STG
Value
0.94
133
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
1 of 6
www.diodes.com
November 2009
? Diodes Incorporated
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| DMG4800LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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