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| 型号： | DMG4932LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 9.5A SO8 |
| 标准包装： | 1 |
| 系列： | SiMFET |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 15 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1932pF @ 15V |
| 功率 - 最大： | 1.19W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.236"，6.00mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4932LSD-13DIDKR |
DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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High Density UMOS with Schottky Barrier Diode
Low Leakage Current at High Temp.
High Conversion Efficiency
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
100% UIS and R g Tested
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.072 grams (approximate)
Q1
Q2
D iodes Schottky I ntegrated M O S FET
D2
G2
D 1
D 2
D2
S2/D1
G1
S1
Top View
S2/D1
S2/D1
G 1
S 1
G 2
S 2
Top View
Internal Schematic
N-Channel MOSFET
N-Channel MOSFET
Maximum Ratings – Q1 @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±12
Unit
V
V
Continuous Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 85°C
I D
9.5
7.2
A
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
I DM
I AR
E AR
40
13
25.4
A
A
mJ
Maximum Ratings – Q2 @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Unit
V
V
Continuous Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 85°C
I D
9.5
7.5
A
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
I DM
I AR
E AR
40
13
25.4
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J , T STG
Value
1.19
107
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
1 of 9
www.diodes.com
August 2010
? Diodes Incorporated
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