- 您现在的位置：买卖IC网 > Datasheet目录404 > DMG6602SVT-7 (Diodes Inc)MOSFET N/P-CH 30V TSOT23-6 Datasheet资料下载
参数资料
| 型号： | DMG6602SVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V TSOT23-6 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.4A，2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.1A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 15V |
| 功率 - 最大： | 1.12W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | TSOT-23-6 |
| 包装： | 标准包装 |
| 其它名称： | DMG6602SVT-7DIDKR |
DMG6602SVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Device
Q1
V (BR)DSS
30V
R DS(on)
60m Ω @ V GS = 10V
100m Ω @ V GS = 4.5V
95m Ω @ V GS = -10V
I D
T A = 25°C
3.4A
2.7A
-2.8A
?
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free Finish; RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Q2
-30V
140m Ω @ V GS = -4.5V
-2.3A
Mechanical Data
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
?
?
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
?
?
?
Backlighting
DC-DC Converters
Power management functions
?
Weight: 0.013 grams (approximate)
Q1
Q2
D1
D2
TSOT26
G1
S2
G2
1
2
3
6
5
4
D1
S1
D2
G1
S1
G2
S2
Top View
Top View
N-Channel
P-Channel
Ordering Information (Note 3)
Part Number
DMG6602SVT-7
Case
TSOT26
Packaging
3000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
66C = Product Type Marking Code
66C
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
1 of 10
www.diodes.com
May 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG6898LSD-13 | MOSFET 2N-CH 20V 9.5A SO8 |
| DMG6968U-7 | MOSFET N-CH 20V 6.5A SOT-23 |
| DMG6968UDM-7 | MOSFET N-CH 6.5A 20V SOT-26 |
| DMG7401SFG-7 | MOSFET P CH 30V 9.8A POWERDI3333 |
| DMG7408SFG-7 | MOSF N CH 30V 7A 3333-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG6898LSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG6898LSD-13 | 功能描述:MOSFET MOSFET N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG6968LSD-13 | 功能描述:MOSFET N-CH 20V VDSS 30A 12V VGSS .81W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG6968U | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG6968U-7 | 功能描述:MOSFET N-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。