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| 型号： | DMG6602SVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V TSOT23-6 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.4A，2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.1A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 15V |
| 功率 - 最大： | 1.12W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | TSOT-23-6 |
| 包装： | 标准包装 |
| 其它名称： | DMG6602SVT-7DIDKR |
DMG6602SVT
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Unit
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Steady
State
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
3.4
2.7
2.7
2.2
A
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (Note 5)
I S
I DM
1.5
25
A
A
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±20
Unit
V
V
Continuous Drain Current (Note 5) V GS = -10V
Continuous Drain Current (Note 5) V GS = -4.5V
Steady
State
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
-2.8
-2.4
-2.3
-2.1
A
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (Note 5)
I S
I D
-1.5
-20
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<10s
T A = 25°C
T A = 70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.84
0.52
155
109
1.27
0.8
102
71
34
-55 to +150
W
°C/W
W
°C/W
°C
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
2 of 10
www.diodes.com
May 2012
? Diodes Incorporated
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