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| 型号： | DMG4468LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.7A TO252 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 11.6A，10V |
| Id 时的 Vgs(th)（最大）： | 1.95V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.85nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 867pF @ 15V |
| 功率 - 最大： | 1.68W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4468LK3-13DIDKR |
DMG4468LK3
30
25
V GS = 10V
20
V DS = 5.0V
V GS = 4.5V
15
20
V GS = 4.0V
V GS = 3.5V
15
10
T A = 150°C
10
T A = 125°C
5
V GS = 3.0V
5
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5
1
V GS = 2.5V
1.5
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0.040
0.036
0.032
0.028
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
0.05
0.04
V GS , GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
V GS = 4.5V
0.024
0.020
0.016
0.012
0.008
0.004
0
V GS = 4.5V
V GS = 10V
0.03
0.02
0.01
0
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
5
10 15 20 25
30
0
5
10 15
20
1.7
1.5
I D , DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.05
0.04
I D , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1.3
0.03
1.1
0.9
V GS = 4.5A
I D = 5A
0.02
V GS = 10A
I D = 10A
0.7
0.5
V GS = 10A
I D = 10A
0.01
0
V GS = 4.5A
I D = 5A
-50
-25 0
25 50 75
100 125 150
-50
-25
0
25 50 75
100 125 150
T J , JUNCTION TEMPERATURE ( ° C)
Fig. 5 On-Resistance Variation with Temperature
T A AMBIENT TEMPERATURE (°C)
Fig. 6 Typical Static Drain-Source On-State Resistance
vs. Ambient Temperature
DMG4468LK3
Document number: DS31958 Rev. 3 - 2
3 of 6
www.diodes.com
June 2013
? Diodes Incorporated
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