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| 型号： | DMG4468LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.7A TO252 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 11.6A，10V |
| Id 时的 Vgs(th)（最大）： | 1.95V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.85nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 867pF @ 15V |
| 功率 - 最大： | 1.68W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4468LK3-13DIDKR |
DMG4468LK3
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Unit
V
V
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +85°C
I D
I DM
9.7
6.3
48
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C
Operating and Storage Temperature Range
Notes:
5 . Device mounted on FR-4 PCB, with minimum recommended pad layout.
Symbol
P D
R ? JA
T J , T STG
Value
1.68
74.3
-55 to +150
Unit
W
°C/W
°C
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1.0
±100
V
μA
nA
V GS = 0V, I D = 250μA
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.05
-
-
-
-
11
17
8
0.73
1.95
16
25
-
1.0
V
m ?
S
V
V DS = V GS , I D = 250μA
V GS = 10V, I D = 11.6A
V GS = 4.5V, I D = 10A
V DS = 10V, I D = 9A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
867
85
81
1.39
18.85
2.59
6.15
5.46
14.53
18.84
6.01
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 10V, V DS = 15V,
I D = 11.6A
V DD = 15V, V GS = 10V,
R L = 1.3 ? , R G = 3 ?
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4468LK3
Document number: DS31958 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
? Diodes Incorporated
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