参数资料
型号: DMG4496SSS-13
厂商: Diodes Inc
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 30V 10A SO8
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 10A
开态Rds(最大)@ Id, Vgs @ 25° C: 21.5 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 10.2nC @ 10V
输入电容 (Ciss) @ Vds: 493.5pF @ 15V
功率 - 最大: 1.42W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
产品目录页面: 1577 (CN2011-ZH PDF)
其它名称: DMG4496SSS-13DIDKR
DMG4496SSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
30V
R DS(ON) max
21.5m ? @ V GS = 10V
29m ? @ V GS = 4.5V
I D max
T A = +25°C
10A
8A
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description
This MOSFET has been designed to minimize the on-state resistance
?
?
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
(R DS(ON) ) and yet maintain superior switching performance, making it
Mechanical Data
ideal for high efficiency power management applications.
Applications
?
?
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
?
?
?
Backlighting
Power Management Functions
DC-DC Converters
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
?
Weight: 0.074 grams (approximate)
SO-8
Top View
S
S
S
G
Top View
Internal Schematic
D
D
D
D
G
D
S
Equivalent circuit
Ordering Information (Note 4 & 5)
Part Number
DMG4496SSS-13
DMG4496SSSQ-13
Compliance
Standard
Automotive
Case
SO-8
SO-8
Packaging
2500 / Tape & Reel
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
G4496SS = Product Type Marking Code
G4496SS
YY WW
G4496SS
YY WW
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMG4496SSS
Document number: DS32048 Rev. 5 - 2
1 of 6
www.diodes.com
September 2013
? Diodes Incorporated
相关PDF资料
PDF描述
DMG4511SK4-13 MOSFET N/P-CH 35V TO252-4L
DMG4710SSS-13 MOSFET N-CH 30V 12.7A SO8
DMG4712SSS-13 MOSFET N-CH 30V 11.2A 8SOIC
DMG4800LFG-7 MOSFET N-CH 30V 7.44A 8DFN
DMG4800LK3-13 MOSFET N-CH 30V 10A TO252
相关代理商/技术参数
参数描述
DMG4511SK4 制造商:Diodes Incorporated 功能描述:MOSFET NP CH COM PAIR 35V TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L, Transistor Polarity:N and P Channel, Continuous Drain Current Id:8.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:1.54W , RoHS Compliant: Yes
DMG4511SK4-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4511SK4-7 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMG4710SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
DMG4710SSS-13 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube